We exclusively represent a high-profile semiconductor IDM that has received substantial R&D investment to develop its existing power semiconductor portfolio further and to advance leading-edge technology development.
The position involves leading their chip development team focused on IGBTs, SJ-RC-IGBTs, SiC MOSFETs, GaN, Ga2O3 devices and next-generation devices.
Our client is looking for a team leader who still retains technical hands-on involvement with device development.
Additionally, the position links closely with the R&D Director with regard to creating business cases to propose further investment and future trend identification.
A summary of the responsibilities is below:
* Lead the research and development of advanced Si and WBG power semiconductor chips
* Next-generation power semiconductor chip design, development planning and strategy.
* 2D/3D TCAD simulations for novel power semiconductor device cells.
* Data analysis to correlate the simulation data and test results.
* Semiconductor device test and characterisation.
* Identifying and allocating engineering tasks & working independently to achieve objectives.
* Interacting effectively with external bodies in the development and promotion of products.
The required experience is:
* BSc with 12+ year related experience or
* MSc with 10+ year related experience or
* PhD Degree with 8+ year experience
* Comprehensive hands-on experience in WBG power semiconductor device fab process, or end-to-end practical experience with fabless product development in a design house
* Comprehensive experience of 2D/3D TCAD software tools, such as Silvaco or Synopsys, for semiconductor device design and process simulations.
* Deep understanding of device principle, structure, characteristics, process, reliability, etc, including MOSFET, IGBT, FRD, HEMT etc.
* Expert in data analysis with statistical software.
* Hands-on characterisation experiences with semiconductor parameter analyser such as HP4156, Keysight B1505 curve tracer, TESLA wafer prober.
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