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Principal Engineer – Epitaxial Process Development (InP)
We are looking for a dynamic and forward-thinking Principal Engineer to join a cutting-edge R&D team in Ipswich. This is a unique opportunity to play a key role in the advancement of epitaxial growth technologies focused on Indium Phosphide (InP) for next-generation photonic applications.
Your expertise will directly influence the design and production of high-performance optoelectronic components powering the future of telecommunications, high-speed data infrastructure, and integrated photonics solutions.
Key Responsibilities:
* Spearhead the design and refinement of epitaxial growth workflows tailored to InP-based photonic platforms.
* Innovate new approaches for wafer development that enhance uniformity and material performance.
* Work in close partnership with device engineering teams to align epitaxial layer structures with system-level goals.
* Oversee the implementation of stringent quality assurance protocols and coordinate advanced material analysis.
* Provide mentorship and technical leadership to junior engineers and research staff.
* Manage complex R&D programs, ensuring delivery within strategic milestones and technical specifications.
* Keep pace with industry trends and breakthroughs in compound semiconductor processing and photonics.
Essential Qualifications & Experience:
* A Ph.D. in Materials Science, Electrical Engineering, Physics, Chemistry, or a closely related field.
* Over 12 years of hands-on experience in compound semiconductor epitaxy, with deep specialization in InP.
* Demonstrated expertise in Metal-Organic Chemical Vapor Deposition (MOCVD) techniques.
* Solid understanding of photonics and optoelectronic device functionality.
* Proficiency in statistical methods for process control and interpretation of complex datasets.
* Exceptional interpersonal, communication, and leadership skills.
* Strong knowledge of semiconductor fabrication standards and industry norms.
Interested to know more?
Apply here with your CV .
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