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Acad108362

Bristol (City of Bristol)
University of Bristol
€35,000 a year
Posted: 17 November
Offer description

Applications are invited for the role of Postdoctoral Researcher position at the Centre for Device Thermography and Reliability (CDTR), led by Professor Kuball. This role encompasses the advanced electrical characterization of wide and ultra-wide bandgap semiconductor materials and devices, including GaN, Gallium Oxide, SiC and diamond (key enabling materials for power and RF electronics) and/or semiconductor device fabrication. Examples of interest include graded AlGaN/GaN channel and AlScN device technologies for RF applications, and vertical GaN devices for power applications. In this role, you will have the opportunity to develop and study unique device structures, and to access the extensive electrical device testing suite available in Bristol, in addition to thermal and electric field analysis of devices, and simulation tools (Silvaco Victory/ATLAS, ANSYS). You will also have access to a state-of-the‑art clean room and the opportunity to collaborate within our 35‑member team as well as with our industrial partners spanning the semiconductor supply chain.

The CDTR leads numerous UK and international strategic programmes on power and RF electronics, including the ESA programme S2CANT, the EPSRC programme grant ULTRAlGaN and the Innovation and Knowledge Centre REWIRE, focusing on GaN, Ga2O3, SiC and diamond power materials and devices, from their fundamental understanding and development, to the commercialization of device technology in part co-designed with industry, a strategic investment of the UK funding agency UKRI in excess of £18M. This position also benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng) in 2020, and various US funded programmes the CDTR is partnered in.


Responsibilities

* Conduct research to advance ultra‑wide bandgap semiconductor device technology and their understanding. This includes conducting research in the electrical characterization of wide and ultra‑wide bandgap materials and devices, processing of semiconductor devices in a clean room using advanced fabrication techniques, developing device simulation TCAD models to complement experiments and to support device design, and analysing device failure, breakdown and reliability.
* Contribute to managing our thermal characterization laboratory, advise junior group members and support short‑term industrial contract.


Qualifications

Applicants should have postgraduate (PhD) experience in physics, Materials Science or Engineering, or be working towards one, or equivalent professional qualification/experience. Ideally with a good publication record. The position requires extensive expertise in advanced electrical characterization of wide and ultrawide bandgap materials and/or devices and/or semiconductor device processing, with photolithography/laser writer or e‑beam lithography being an essential requirement.

A willingness to work together with, and co‑supervise, PhD students of the CDTR will be necessary.

The job title in the University of Bristol is known as Research Associate.


Diversity and Inclusion

The University of Bristol aims to be a place where everyone feels able to be themselves and do their best in an inclusive working environment where all colleagues can thrive and reach their full potential. We want to attract, develop, and retain individuals with different experiences, backgrounds and perspectives - particularly people of colour, LGBT+ and disabled people - because diversity of people and ideas remains integral to our excellence as a global civic institution.

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