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Research associate in thin film memcapacitors

The University of Edinburgh
Research associate
Posted: 11 December
Offer description

Grade UE07: £41,064-£48,822 per annum

School of Engineering, College of Science & Engineering

Institute for Integrated Micro and Nano Systems (IMNS)

Full Time: 35 hours per week

Fixed Term: up to 24 months

The Opportunity:

We are looking for an experienced Research Associate in Thin Film Memcapacitors. The position will be based at the King’s Buildings Campus and will commence as soon as possible.

Our ambition is to push the frontiers of electronics through emerging nanotechnologies, disrupting current ways of thinking by innovating advanced energy-efficient Hardware solutions for AI and the new age of electronics. To realise this vision, we are seeking exceptional candidates to join our team, interested in devoting their passion for addressing some of the challenges we have identified.

This post will involve the development of electronic devices based on thin film technologies for novel and emerging memory applications with a focus in reconfigurable and tuneable capacitance. These include designing device architectures and material stacks with standard cleanroom processes (lithography, magnetron sputtering, ALD, etc), analytical and morphological characterisation of developed films (such as XPS, SEM and AFM) as well as electrical characterisation of fabricated devices.

This position is affiliated with the prestigious Royal Academy of Engineering Chair in Emerging Technologies held by Regius Chair of Engineering Prof Prodromakis, Director of the Centre for Electronics Frontiers. The appointee will support the delivery of the vision of this 10-year programme that aspires to develop AI Hardware solutions for Lifelong Learning applications.

Your skills and attributes for success:

1. A PhD in Electronics, Physics, Materials Science or similar discipline, with a focus in semiconductor devices and/or thin films
2. Proven track record of research or industrial experience in fabrication and testing of memory devices such as memcapacitors as well as thin films that are typical involved in said devices such as metal-oxides and ferroelectric materials.
3. Demonstrated experience with cleanroom fabrication processes. Key processes include lithography, magnetron sputtering and ALD. The candidate is expected to be able to work independently in a cleanroom environment.
4. Knowledge of electrical characterisation techniques in DC and low frequency RF domain. The candidate must be familiar with electrical tests that are involved in the evaluation of semiconductors, insulators and ferroelectric materials.
5. Experience with impedance spectroscopy modelling techniques (such as EIS).

Application Information

Please ensure you include the following documents in your application:

- CV

- Cover letter

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