Reference:
0701-25
The Department of Physics at Lancaster University invites applications for a Senior Post-Doctoral Research Associate to work on ULTRARAM™ memories.
By exploiting the unusual band offsets of GaSb, InAs and AlSb, and the phenomenon of resonant tunnelling, we have demonstrated low-voltage, charge-storage memories with a switching energy per unit area that is 1000x lower than Flash and 100x lower than DRAM.
Following the demonstration of single bit devices and small digital arrays, we are now expanding the research programme to include investigation of the feasibility of analogue devices for use as elements in an in-memory computing (neuromorphic) array for ‘multiply and accumulate’ (MAC) operations in edge-AI applications.
The present post is advertised in the context of an externally-funded project in collaboration with industrial partners as part of a feasibility study. It is thus offered for a time-limited period of six (6) months, with the possibility of further extension if additional funding were to become available.
The group has access to state-of-the art semiconductor epitaxial growth facilities, a fully-equipped clean room for device processing and dedicated custom-built kit for electrical characterisation.
You will be expected to contribute substantially to device design and modelling, process flow development and device and small array fabrication and testing. In addition to a PhD in experimental semiconductor physics, substantial experience in compound semiconductor electronic device processing and research is essential, due to the limited duration of the funded project.